Search results for " difetti di punto"
showing 10 items of 16 documents
Effects of high pressure thermal treatments in oxygen and helium atmospheres on amorphous silicon dioxide and its radiation hardness
2009
The effects of thermal treatments at similar to 400 degrees C in oxygen or helium atmospheres at similar to 180 baron the radiation hardness of amorphous SiO(2) are studied. The generation efficiency of several point defects under gamma irradiation is compared to that of the untreated material. All the effects on point defects generation here observed can be explained in terms of changes in the precursor sites. In particular it has been observed that the thermal treatments can change the precursors sites of point defects both through temperature and pressure related processes, not depending on the atmosphere, and through oxygen related processes creating oxygen excess sites. The presence of…
Annealing of radiation induced oxygen deficient point defects in amorphous silicon dioxide: evidence for a distribution of the reaction activation en…
2011
The selective annealing of point defects with different activation energies is studied, by performing sequences of thermal treatments on gamma irradiated silica samples in the temperature range 300-450 °C. Our experiments show that the dependence on time of the concentration of two irradiation induced point defects in silica, named ODC(II) (standing for oxygen deficient centre II) and the E(γ)(') centre, at a given temperature depends on the thermal history of the sample for both of the centres studied; moreover in the long time limit this concentration reaches an asymptotic value that depends on the treatment temperature alone. These results suggest the existence of a distribution of the a…
Irradiation induced Germanium Lone Pair Centers in Ge-doped Sol-gel SiO2: luminescence lifetime and temperature dependence
2010
We studied the temperature dependence of the emission profile and of the lifetime, measured at 4.3 eV, related to the germanium lone pair centers (GLPC) induced by gamma ray at 5 MGy in a Ge-doped silica sample and in an analogous sample irradiated at 10 MGy, in which by a successive thermal treatment up to 415 °C the induced GLPC has been modified (named residual GLPC in the following). The measurements were recorded in the temperature range 10-300 K using an excitation of ∼5.2 eV. The data show that the energy level scheme of the induced and the residual GLPC is very similar to that of the native defects generated during the synthesis, and the intersystem crossing process (ISC) of the ind…
Room Temperature Instability of E′γ Centers Induced by γ Irradiation in Amorphous SiO2
2008
We study by optical absorption measurements the stability of E'(gamma) centers induced in amorphous silica at room temperature by gamma irradiation up to 79 kGy. A significant portion of the defects spontaneously decay after the end of irradiation, thus allowing the partial recovery of the transparency loss initially induced by irradiation. The decay kinetics observed after gamma irradiation with a 0.6 kGy dose closely resembles that measured after exposure to 2000 pulses of pulsed ultraviolet (4.7 eV) laser light of 40 mJ/cm(2) energy density per pulse. In this regime, annealing is ascribed to the reaction of the induced E'(gamma) centers with diffusing H(2) of radiolytic origin. At higher…
Intrinsic generation of OH groups in dry silicon dioxide upon thermal treatments
2008
We show the existence of an intrinsic generation mechanism of OH groups in synthetic dry silica upon thermal treatments. Samples are treated for ~160 h at 390 °C in He at 2.7 or 180 bar, and the growth of the OH IR absorption band at 3670 cm−1 is observed. An OH concentration of ~10^18 cm^−3 is estimated. Possible contributions of reactions with molecules absorbed from the atmosphere are excluded. Reactions with H2O already contained in the samples are rejected by IR measurements. The observed OH generation is attributed to the reaction of network sites with H2 already present in the material. Possible reaction paths are examined
S29i attribution of the 1.3 mT hyperfine structure of the E′γ centers in amorphous SiO2
2009
We report an experimental investigation by electron paramagnetic resonance of the doublet of lines split by ∼1.3 mT and centered on the E′γ; center resonance line in the spectrum of irradiated amorphous SiO2 . Commercial and sol-gel materials, some of which subjected to hydrogen-deuterium exchange, were investigated. Exposure to γ or Β rays at room temperature of the samples and subsequent thermal treatments were carried out to induce the defects and to study their thermal stability. In all the materials used the ratio between the signal of the E′γ centers and that of the 1.3 mT doublet is constant and independent of the OH and OD contents. Furthermore, the 1.3 mT doublet and the E′γ center…
Structural and luminescence properties of amorphous SiO2 nanoparticles
2011
We report an experimental study on the photoluminescence band peaked at 2.7 eV (blue band) induced by thermal treatments in nanometric amorphous SiO 2. In particular the emission dependence on the nanometric particles size as a function of their mean diameter from 7 nm up to 40 nm is investigated. We found that the emission amplitude increases on decreasing the particle diameter, showing a strong correlation between the blue band and the nanometric nature of the particles. By Raman spectroscopy measurements it is evidenced that the SiO2 nanoparticles matrix is significantly affected by the reduction of size. Basing on the shell-like model, these findings are interpreted assuming that the de…
Twofold coordinated Ge defects induced by gamma-ray irradiation in Ge-doped SiO2
2008
We report an experimental study by photoluminescence, optical absorption and Electron Paramagnetic Resonance measurements on the effects of exposure of Ge-doped amorphous SiO2 to gamma ray radiation at room temperature. We have evidenced that irradiation at doses of the order of 1 MGy is able to generate Ge-related defects, recognizable from their optical properties as twofold coordinated Ge centers. Until now, such centers, responsible for photosensitivity of Ge-doped SiO2, have been induced only in synthesis procedures of materials. The found result evidences a role played by gamma radiation in generating photosensitive defects and could furnish a novel basis for photosensitive pattern wr…
Structural properties of the range-II- and range-III order in amorphous-SiO2 probed by electron paramagnetic resonance and Raman spectroscopy
2010
In the present work we report an experimental investigation by electron paramagnetic resonance spectroscopy on the hyperfine structure of the E. point defect, probing the local arrangement of the network (range-II order), and by Raman spectroscopy on the D 1 and D 2 lines, probing mean features of the network (range-III order). Our studies, performed on a-SiO 2 samples thermally treated at 1000 °C in air for different time durations, show that changes of the hyperfine structure and of the D 1 and D 2 lines occur in a correlated way. These results give strong evidence that the range-II and range-III order properties are intimately related to each other and that these properties are determine…
Ge-doping dependence of gamma-ray induced germanium lone pair centers in Ge-doped silica
2008
We report an experimental study on the y irradiation effects in Ge-doped sol-gel silica samples doped with Ge from 10 2 up to 10 4 part per million molar. The samples were exposed to the radiation generated by a 60 Co source up to an accumulated dose value of 10 MGy. Our data evidence that the γ irradiation significantly increases the number of Germanium Lone Pair Centers (GLPC). Such defects are induced with a concentration that depends on the Ge content of the employed material in those samples where no optical activity related to -s GLPC was detected before irradiation. Furthermore an increase of the GLPC concentration was detected also in a sample that already contains this defect after…